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| Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance * * * * * 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x 0.4064 mm Primary Applications * 17 15 13 Output Power-dBm, Gain-d 11 9 7 5 Pout (dBm) 3 1 -12 -8 -4 0 Input Power - dBm 4 8 12 Gain (dB) PAE (%) 0 10 F = 10 GHz Vd = 3 V Iq = 15 mA Low Noise amplifiers 80 70 60 50 40 30 20 Power Added Efficiency- 2.4 2.2 2.0 1.8 Noise Figure - dB 1.6 1.4 1.2 1.0 0.8 0.6 0.4 5 10 15 20 25 30 35 40 45 50 Drain Current - mA 16 15 14 13 12 11 10 9 8 7 6 F = 10 GHz Associated Gain - dB NF (dB) Vd = 3 V NF (dB) Vd = 5 V NF (dB) Vd = 8 V Gain (dB) Vd = 3 V Gain (dB) Vd = 5 V Gain (dB) Vd = 8 V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 1 1 Advance Product Information TGF4350-EPU Electrical Characteristics RECOMMENDED MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG 1/ 2/ Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 7V .085A 0.6 W 20 dBm 150 C 320 C -65 C to 150 C Notes 3/ 1/, 2/ These ratings apply to individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. Nominal value of Idss 3/ DC PROBE TESTS (TA = 25 C 5C) Symbol Idss VP1-5 BVGS1 BVGD1-5 Parameter Saturated Drain Current (info only) Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum 30 -1.5 -30 -30 Maximum 141 -0.5 -8 -8 Value mA V V V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 2 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information TGF4350-EPU FET Elements Lg = 0.040 nH Rg = 0.525 Ohms Rgs = 14500 Ohms Ri = 4.924 Ohms Cgs = 0.364 pF Cdg = 0.042 pF Rdg = 146000 Ohms Rs = 0.300 Ohms Ls = 0.041 nH Rds = 253.858 Ohms Cds = 0.080 pF Rd = 0.833 Ohms Ld = 0.028 nH VCCS Parameters M = 0.091 S A=0 R1 = 1E19 Ohms R2 = 1E19 Ohms F=0 T = 4.000 pS Cdg Rdg Lg G Ri Rgs R1 Cgs R2 Rds Cds Rg VCCS Rd Ld Rs Ls TGA4350EPU pHEMT Model (Vds = 3.0 V and 15mA at T = 25C) Device is mounted on a 20 mil high ledge. Source inductance includes that of source bondwires and ledge TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information TGF4350-EPU Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 4 TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com Advance Product Information TGF4350-EPU Process and Assembly Notes This device should be attached using conductive epoxy only. Contact factory for additional details as required. Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994 8465 Fax (972)994 8504 Web: www.triquint.com 5 |
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